Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Elliman, Robert; Nawaz (Saleh), Muhammad; Kim, Tae-Hyun; Venkatachalam, Dinesh; Belay, Kidane; Ruffell, Simon; Kurunczi, P.; England, J.

Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

Date

2013

Authors

Elliman, Robert

Nawaz (Saleh), Muhammad

Kim, Tae-Hyun

Venkatachalam, Dinesh

Belay, Kidane

Ruffell, Simon

Kurunczi, P.

England, J.

Publisher

Elsevier

Abstract

Resistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin