Application of ion-implantation for improved non-volatile resistive random access memory (ReRAM)

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dc.contributor.authorElliman, Robert
dc.contributor.authorNawaz (Saleh), Muhammad
dc.contributor.authorKim, Tae-Hyun
dc.contributor.authorVenkatachalam, Dinesh
dc.contributor.authorBelay, Kidane
dc.contributor.authorRuffell, Simon
dc.contributor.authorKurunczi, P.
dc.contributor.authorEngland, J.
dc.date.accessioned2015-12-13T22:30:51Z
dc.date.issued2013
dc.date.updated2016-02-24T09:25:23Z
dc.description.abstractResistive switching in transition metal oxides is believed to be controlled by the migration of oxygen vacancies and many interesting device structures employ substoichiometric oxide layers as a source of these active defects. However, the growth of thin
dc.identifier.issn0168-583X
dc.identifier.urihttp://hdl.handle.net/1885/75031
dc.publisherElsevier
dc.sourceNuclear Instruments and Methods in Physics Research: Section B
dc.subjectKeywords: Active defects; Film deposition techniques; Non-volatile memory; Physical structures; Resistive Random Access Memory (ReRAM); Resistive switching; Substoichiometric oxide; Transition-metal oxides; Data storage equipment; Electric properties; Hafnium oxide Ion-implantation; Non-volatile memory; Resistive switching; Tantalum oxide
dc.titleApplication of ion-implantation for improved non-volatile resistive random access memory (ReRAM)
dc.typeJournal article
local.bibliographicCitation.lastpage101
local.bibliographicCitation.startpage98
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationNawaz (Saleh), Muhammad, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKim, Tae-Hyun, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationVenkatachalam, Dinesh, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBelay, Kidane, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRuffell, Simon, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationKurunczi, P., Varian Semiconductor Equipment
local.contributor.affiliationEngland, J., Varian Semiconductor Equipment
local.contributor.authoruidElliman, Robert, u9012877
local.contributor.authoruidNawaz (Saleh), Muhammad, u4355160
local.contributor.authoruidKim, Tae-Hyun, u3924901
local.contributor.authoruidVenkatachalam, Dinesh, u4575027
local.contributor.authoruidBelay, Kidane, u3806698
local.contributor.authoruidRuffell, Simon, u4241699
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091205 - Functional Materials
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.absseo970109 - Expanding Knowledge in Engineering
local.identifier.absseo970110 - Expanding Knowledge in Technology
local.identifier.ariespublicationf5625xPUB4432
local.identifier.citationvolume307
local.identifier.doi10.1016/j.nimb.2012.11.094
local.identifier.scopusID2-s2.0-84885189704
local.identifier.thomsonID000321722200023
local.type.statusPublished Version

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