The impact of SiO2/SiN\rm x stack thickness on laser doping of silicon solar cell

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dc.contributor.authorXu, Lujia
dc.contributor.authorWeber, Klaus
dc.contributor.authorPhang, Sieu Pheng
dc.contributor.authorHamieri, Ziv
dc.contributor.authorFranklin, Evan
dc.contributor.authorFell, Andreas
dc.date.accessioned2015-12-10T23:35:14Z
dc.date.issued2014
dc.date.updated2015-12-10T11:39:56Z
dc.description.abstractLaser doping of semiconductors has been the subject of intense research over the past decades. Previous work indicates that the use of SiO 2/SiN \rm x stacks instead of a single dielectric film as the anti-reflection coating and passivation layer results
dc.identifier.issn2156-3381
dc.identifier.urihttp://hdl.handle.net/1885/69769
dc.publisherIEEE Electron Devices Society
dc.sourceIEEE Journal of Photovoltaics
dc.titleThe impact of SiO2/SiN\rm x stack thickness on laser doping of silicon solar cell
dc.typeJournal article
local.bibliographicCitation.issue2
local.bibliographicCitation.lastpage600
local.bibliographicCitation.startpage594
local.contributor.affiliationXu, Lujia, College of Engineering and Computer Science, ANU
local.contributor.affiliationWeber, Klaus, College of Engineering and Computer Science, ANU
local.contributor.affiliationPhang, Sieu Pheng, College of Engineering and Computer Science, ANU
local.contributor.affiliationHamieri, Ziv, National University of Singapore
local.contributor.affiliationFranklin, Evan, College of Engineering and Computer Science, ANU
local.contributor.affiliationFell, Andreas, College of Engineering and Computer Science, ANU
local.contributor.authoruidXu, Lujia, u4922718
local.contributor.authoruidWeber, Klaus, u9116880
local.contributor.authoruidPhang, Sieu Pheng, u4188633
local.contributor.authoruidFranklin, Evan, u4038737
local.contributor.authoruidFell, Andreas, u5076423
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor090609 - Signal Processing
local.identifier.absseo970109 - Expanding Knowledge in Engineering
local.identifier.ariespublicationU3488905xPUB2114
local.identifier.citationvolume4
local.identifier.doi10.1109/JPHOTOV.2014.2298097
local.identifier.scopusID2-s2.0-84897598107
local.identifier.thomsonID000332008000010
local.type.statusPublished Version

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