On the properties and stability of thermally evaporated Ge-As-Se thin films

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dc.contributor.authorBulla, Douglas
dc.contributor.authorWang, Rongping
dc.contributor.authorPrasad, Amrita
dc.contributor.authorRode, Andrei V
dc.contributor.authorMadden, Steve
dc.contributor.authorLuther-Davies, Barry
dc.date.accessioned2015-12-10T22:23:40Z
dc.date.available2015-12-10T22:23:40Z
dc.date.issued2009
dc.date.updated2016-02-24T12:14:53Z
dc.description.abstractThin films of Ge-As-Se chalcogenide glasses have been deposited by thermal evaporation from bulk material and submitted to thermal treatments. The linear refractive index and optical band-gap for as-deposited and annealed films have been analyzed as function of the deposition parameters, chemical composition and mean coordination number (MCN). The chemical composition of the films was found to be directly affected by deposition rate, with low rates producing films with elevated Ge and reduced As content, whilst at high rates the Ge content was generally reduced and As levels increased compared with the bulk starting material. As a result films with close to the same stoichiometry as the bulk glass could be obtained by choosing appropriate deposition conditions. As-deposited films with MCN in between 2.44 and 2.55 showed refractive indices and optical band-gaps very close to those of the bulk glass whereas outside this range the film indices were higher and the optical gaps lower than those of the bulk glass. Upon annealing at close to their glass transition temperature, high MCN films evolved such that their indices and band-gaps approached the bulk glass values whereas at low MCN films resulted in no changes to the film properties.
dc.identifier.issn0947-8396
dc.identifier.urihttp://hdl.handle.net/1885/52910
dc.publisherSpringer
dc.sourceApplied Physics A: Materials Science and Processing
dc.subjectKeywords: Annealed films; As content; As-deposited films; Band gaps; Bulk glass; Bulk materials; Chalcogenide glass; Chemical compositions; Deposition conditions; Deposition Parameters; Film indices; Film properties; Ge content; Glass transition temperature; High r
dc.titleOn the properties and stability of thermally evaporated Ge-As-Se thin films
dc.typeJournal article
local.bibliographicCitation.lastpage625
local.bibliographicCitation.startpage615
local.contributor.affiliationBulla, Douglas, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWang, Rongping, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationPrasad, Amrita, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationRode, Andrei V, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationMadden, Steve, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLuther-Davies, Barry, College of Physical and Mathematical Sciences, ANU
local.contributor.authoremailu4219061@anu.edu.au
local.contributor.authoruidBulla, Douglas, u4031353
local.contributor.authoruidWang, Rongping, u4219061
local.contributor.authoruidPrasad, Amrita, u4195703
local.contributor.authoruidRode, Andrei V, u8913168
local.contributor.authoruidMadden, Steve, u4151700
local.contributor.authoruidLuther-Davies, Barry, u7601418
local.description.notesImported from ARIES
local.identifier.absfor091206 - Glass
local.identifier.absfor020499 - Condensed Matter Physics not elsewhere classified
local.identifier.ariespublicationu9912193xPUB258
local.identifier.citationvolume96
local.identifier.doi10.1007/s00339-009-5293-0
local.identifier.scopusID2-s2.0-67651215719
local.identifier.thomsonID000267777800012
local.identifier.uidSubmittedByu9912193
local.type.statusPublished Version

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