Strong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN

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dc.contributor.authorKucheyev, Sergei
dc.contributor.authorWilliams, James
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorLi, Gang
dc.contributor.authorPearton, S J
dc.date.accessioned2015-12-13T23:16:11Z
dc.date.issued2000
dc.date.updated2015-12-12T08:47:01Z
dc.description.abstractThe damage buildup in wurtzite GaN films under light (12C) and heavy (197Au) ion bombardment at temperatures from -196 to 550 °C is studied by Rutherford backscattering/channeling spectrometry. A strong surface peak of lattice disorder in addition to the
dc.identifier.issn0003-6951
dc.identifier.urihttp://hdl.handle.net/1885/89277
dc.publisherAmerican Institute of Physics (AIP)
dc.sourceApplied Physics Letters
dc.titleStrong Surface Disorder and Loss of N Produced by Ion Bombardment of GaN
dc.typeJournal article
local.bibliographicCitation.lastpage3901
local.bibliographicCitation.startpage3899
local.contributor.affiliationKucheyev, Sergei, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationJagadish, Chennupati, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationLi, Gang, ShenZhen Fangda GuoKe Optronics Technical Co Ltd
local.contributor.affiliationPearton, S J, University of Florida
local.contributor.authoruidKucheyev, Sergei, u9910365
local.contributor.authoruidWilliams, James, u8809701
local.contributor.authoruidJagadish, Chennupati, u9212349
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.description.refereedYes
local.identifier.absfor090699 - Electrical and Electronic Engineering not elsewhere classified
local.identifier.ariespublicationMigratedxPub19246
local.identifier.citationvolume76
local.identifier.scopusID2-s2.0-0000765291
local.type.statusPublished Version

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