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Influence of implantation damage on emitter recombination

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dc.contributor.authorRatcliff, Thomasen_AU
dc.contributor.authorShalav, Avien_AU
dc.contributor.authorFong, Keanen_AU
dc.contributor.authorElliman, Roberten_AU
dc.contributor.authorBlakers, Andrewen_AU
dc.date.accessioned2015-12-10T23:01:42Z
dc.date.issued2014
dc.date.updated2015-12-10T08:29:31Z
dc.description.abstractIn this study the influence of implantation damage on emitter recombination is examined for both boron and phosphorus implanted emitters after thermal processing. Dominant defects are identified and used to describe observed changes in emitter saturation
dc.identifier.issn1876-6102
dc.identifier.urihttp://hdl.handle.net/1885/61711
dc.publisherElsevier
dc.sourceEnergy Procedia
dc.titleInfluence of implantation damage on emitter recombination
dc.typeJournal article
local.bibliographicCitation.lastpage279
local.bibliographicCitation.startpage272
local.contributor.affiliationRatcliff, Thomas, College of Engineering and Computer Science, ANU
local.contributor.affiliationShalav, Avi, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationFong, Kean, College of Engineering and Computer Science, ANU
local.contributor.affiliationElliman, Robert, College of Physical and Mathematical Sciences, ANU
local.contributor.affiliationBlakers, Andrew, College of Engineering and Computer Science, ANU
local.contributor.authoruidRatcliff, Thomas, u4311306
local.contributor.authoruidShalav, Avi, u4479768
local.contributor.authoruidFong, Kean, u4448270
local.contributor.authoruidElliman, Robert, u9012877
local.contributor.authoruidBlakers, Andrew, u9113453
local.description.embargo2037-12-31
local.description.notesImported from ARIES
local.identifier.absfor020406 - Surfaces and Structural Properties of Condensed Matter
local.identifier.absfor091207 - Metals and Alloy Materials
local.identifier.absseo970102 - Expanding Knowledge in the Physical Sciences
local.identifier.ariespublicationU3594520xPUB633
local.identifier.citationvolume55
local.identifier.doi10.1016/j.egypro.2014.08.080
local.identifier.scopusID2-s2.0-84919881446
local.identifier.thomsonID000346095800037
local.type.statusPublished Version

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