Direct measurement of spectral momentum densities of ordered and disorderd semiconductors by high energy EMS

Abstract

High Energy solid state electron momentum spectroscopy (EMS) is capable of directly measuring spectral functions of ordered and disordered solid matter. In this paper we investigate the spectral functions for the group IV semiconductors Ge and Si. We attempt to resolve the electronic structure differences in amorphous, polycrystalline and crystalline atomic arrangements of the semiconductors. We examine the experimental differences in polycrystalline and amorphous Ge, and draw conclusions as to the similarities/differences between the two states of matter.