Giant pop-ins in nanoindented silicon and germanium caused by lateral cracking

dc.contributor.authorOliver, D. J.
dc.contributor.authorLawn, B. R.
dc.contributor.authorCook, R. F.
dc.contributor.authorReitsma, M. G.
dc.contributor.authorBradby, J. E.
dc.contributor.authorWilliams, J. S.
dc.contributor.authorMunroe, P.
dc.date.accessioned2016-04-18T04:08:01Z
dc.date.available2016-04-18T04:08:01Z
dc.date.issued2008
dc.date.updated2016-06-14T08:43:41Z
dc.description.abstractGiant “pop-in” displacements are observed in crystalline silicon and germanium during high-load nanoindentation with a spherical diamond tip. These events are consistent with material removal triggered by lateral cracking during loading, which poses a hazard to microelectromechanical systems (MEMS) operation. We examine the scaling of the pop-in displacements as a function of peak indentation load and demonstrate a correlation with the depth of the plastic contact zone. We argue that giant pop-ins may occur in a broad range of highly brittle materials.
dc.description.sponsorshipThis work was supported by a travel grant from the Australian Research Network for Advanced Materials.en_AU
dc.identifier.issn0884-2914en_AU
dc.identifier.urihttp://hdl.handle.net/1885/101047
dc.publisherMaterials Research Society
dc.rights© 2008 Materials Research Society
dc.sourceJournal of Materials Research
dc.subjectGe
dc.subjectSi
dc.subjectFracture
dc.titleGiant pop-ins in nanoindented silicon and germanium caused by lateral cracking
dc.typeJournal article
local.bibliographicCitation.issue02en_AU
local.bibliographicCitation.lastpage301en_AU
local.bibliographicCitation.startpage297en_AU
local.contributor.affiliationOliver, David, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationLawn, Brian, National Institute of Standards and Technology, United States of Americaen_AU
local.contributor.affiliationCook, R F, National Institute of Standards and Technology, United States of Americaen_AU
local.contributor.affiliationReitsma, M G, National Institute of Standards and Technology, United States of Americaen_AU
local.contributor.affiliationBradby, Jodie, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationWilliams, James, College of Physical and Mathematical Sciences, CPMS Research School of Physics and Engineering, Department of Electronic Materials Engineering, The Australian National Universityen_AU
local.contributor.affiliationMunroe, Paul, University of New South Wales, Australiaen_AU
local.contributor.authoruidu4191336en_AU
local.description.notesImported from ARIESen_AU
local.identifier.absfor020499en_AU
local.identifier.ariespublicationu3488905xPUB147en_AU
local.identifier.citationvolume23en_AU
local.identifier.doi10.1557/JMR.2008.0070en_AU
local.identifier.scopusID2-s2.0-39749114328
local.identifier.thomsonID000253010800001
local.publisher.urlCambridge University Pressen_AU
local.type.statusPublished Versionen_AU

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