Hot Electron Injection Laser controlled carrier-heating induced gain switching

Date

2005

Authors

Hoskens, R C P
van de Roer, T G
Smalbrugge, E
Kwaspen, J J M
Tolstikhin, V I
Jagadish, Chennupati
Acket, G A
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

The novel Hot Electron Injection Laser (HEL), a three-terminal vertically integrated transistor-laser structure, is designed to investigate and possibly utilize the effects of carrier-heating on the optical gain and wavelength chirp. Simulations show the

Description

Keywords

Keywords: Civil aviation; Current density; Electron injection; Electrons; Epitaxial growth; Heating; Hot carriers; Hot electrons; Injection lasers; Lasers; Leakage currents; Molecular beam epitaxy; Pulsed laser deposition; Semiconductor lasers; Thermal noise; activ Carrier heating; Chirp; Direct modulation; Heterojunction bipolar transistor; Hot electrons; Laser diode; Ultrafast modulation

Citation

Source

2004 Conference on Optoelectronic and Microelectronic Materials and Devices Proceedings

Type

Conference paper

Book Title

Entity type

Access Statement

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