Low-power and controllable memory window in Pt/Pr 0.7Ca 0.3MnO 3/yttria-stabilized zirconia/w resistive random-access memory devices

Date

2012

Authors

Liu, Xinjun
Biju, Kuyyadi P.
Park, Jubong
Park, Sangsu
Shin, Jungho
Kim, Insung
Sadaf, Sharif Md.
Hwang, Hyunsang

Journal Title

Journal ISSN

Volume Title

Publisher

American Scientific Publishers

Abstract

Yttria-stabilized zirconia (YSZ) layers of various thicknesses were designed and introduced before Pr0.7Ca0.3MnO3 (PCMO) film was deposited on W bottom electrodes with a submicron via-hole structure. By changing the thickness of the YSZ barrier layer (3,5,9, and 13 nm), a tunable memory window can be realized while low power consumption (Pmax < 4 μW) is maintained. Resistive switching (RS) in a Pt/PCMO/YSZ/W stack with a thin YSZ layer can be ascribed to an oxidation/reduction reaction caused by a ring-type PCMO/W contact, while RS with a thick YSZ layer may be related to oxygen migration across the YSZ layer between the PCMO film and the W bottom electrode and the increase (decrease) of the effective tunnel barrier height of the YSZ layer. Excellent RS behavior characteristics, such as a large RHRS/RLRS ratio (> 103), die-to-die uniformity, sweeping endurance, and a retention time of more than 103 s, can be obtained by optimizing the thickness of YSZ layer.

Description

Keywords

Keywords: Barrier layers; Behavior characteristic; Bottom electrodes; Low Power; Low-power consumption; Memory window; Oxygen migration; Random access memories; Resistive switching; Retention time; RRAM; Submicron; Tunnel barrier; Via-hole; Manganese oxide; Mangani Low power; Manganites; Memory window; RRAM

Citation

Source

Journal of Nanoscience and Nanotechnology

Type

Journal article

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Restricted until

2037-12-31