Structural relaxation and optical properties in amorphous Ge33 As12 Se55 films
Date
2007
Authors
Wang, Rongping
Rode, Andrei V
Madden, Steve
Zha, Congji
Jarvis, Ruth
Luther-Davies, Barry
Journal Title
Journal ISSN
Volume Title
Publisher
Elsevier
Abstract
Amorphous Ge33As12S55 films prepared by ultra fast pulsed laser deposition (PLD) have been vacuum annealed over a range of different temperatures. Raman scattering measurements indicated that the features corresponding to Ge-Se and As-Se clusters increase in intensity with increasing annealing temperature (Ta) up to their respective glass transition temperature, and then decrease with further increasing Ta up to 300 °C. Optical property measurements showed that the refractive index deceases but the optical band gap increases with increasing Ta, and both of them could be fitted by the exponential function. The corresponding characteristic time extracted was found not to obey Arrhenius behavior, which is consistent with the existence of a broken network cut by cross-linking bonds and different clusters in films.
Description
Keywords
Keywords: Annealing; Chalcogenides; Germanium compounds; Optical properties; Pulsed laser deposition; Structural relaxation; Exponential function; Optical property measurements; Ultra fast pulsed laser deposition; Amorphous films Chalcogenides; Laser deposition; Structural relaxation
Citation
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Source
Journal of Non-crystalline Solids
Type
Journal article
Book Title
Entity type
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DOI
10.1016/j.jnoncrysol.2006.12.080
Restricted until
2037-12-31