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Novel growth and properties of GaAs nanowires on Si substrates

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Date

2010

Authors

Kang, Jung-Hyun
Gao, Qiang
Joyce, Hannah J
Jagadish, Chennupati
Kim, Yong
Choi, Duk-Yong
Guo, Yi N
Xu, Hongyi
Zou, Jin
Fickenscher, M A

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Physics Publishing

Abstract

Straight, vertically aligned GaAs nanowires were grown on Si(111) substrates coated with thin GaAs buffer layers. We find that the V/III precursor ratio and growth temperature are crucial factors influencing the morphology and quality of buffer layers. A

Description

Keywords

Keywords: Buffer layer growth; Double layer structure; GaAs; High temperature; In-situ annealing; Low temperatures; Nanowire growth; Precursor ratios; Si substrates; Si(111) substrate; Structural and optical properties; V/III ratio; Vertically aligned; Buffer layer

Citation

URI

http://hdl.handle.net/1885/24175

Collections

ANU Research Publications

Source

Nanotechnology

Type

Journal article

Book Title

Entity type

Access Statement

License Rights

DOI

10.1088/0957-4484/21/3/035604

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