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Growth and characterization of III-V compound semiconductor nanowires

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Date

2011

Authors

Gao, Qiang
Jackson, Howard E
Smith, Leigh M
Yarrison-Rice, Jan M
Zou, Jin
Johnson, M
Jagadish, Chennupati
Tan, Hark Hoe

Journal Title

Journal ISSN

Volume Title

Publisher

Institute of Electrical and Electronics Engineers (IEEE Inc)

Abstract

We review various III-V compound semiconductor nanowires grown by metalorganic chemical vapor deposition. Transmission and scanning electron microscopy, micro-photolumine-scence and micro-Raman spectroscopy have been used to understand the crystal structure, light emission and band structure.

Description

Keywords

Keywords: III-V compound semiconductor; Micro Raman Spectroscopy; Metallorganic chemical vapor deposition; Nanowires; Raman spectroscopy; Scanning electron microscopy; Semiconductor growth; Crystal structure

Citation

URI

http://hdl.handle.net/1885/23436

Collections

ANU Research Publications

Source

16th Opto-Electronics and Communications Conference, OECC 2011

Type

Conference paper

Book Title

Entity type

Access Statement

License Rights

DOI

Restricted until

2037-12-31

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Description
01_Gao_Growth_and_characterization_of_2011.pdf (127.38 KB)

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