Polarity driven formation of InAs/GaAs hierarchical nanowire heterostructures
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Authors
Paladugu, Mohanchand
Zou, Jin
Guo, Ya-Nan
Zhang, Xin
Joyce, Hannah J.
Gao, Qiang
Tan, Hark Hoe
Jagadish, C.
Kim, Yong
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American Institute of Physics (AIP)
Abstract
The structural and morphological characteristics of InAs/GaAs radial nanowireheterostructures were investigated using transmission electron microscopy. It has been found that the radial growth of InAs was preferentially initiated on the {112}A sidewalls of GaAsnanowires. This preferential deposition leads to extraordinarily asymmetric InAs/GaAs radial nanowireheterostructures. Such formation of radial nanowireheterostructures provides an opportunity to engineer hierarchical nanostructures, which further widens the potential applications of semiconductor nanostructures.
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Applied Physics Letters