Thermal Conductivity of Amorphous NbOx Thin Films and Its Effect on Volatile Memristive Switching
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Nandi, Sanjoy; Das, Sujan Kumar; Cui, Yubo; El Helou, Assaad; NATH, SHIMUL KANTI; Ratcliff, Tom; Raad, Peter E.; Elliman, Rob
Description
Metal-oxide-metal (MOM) devices based on niobium oxide exhibit threshold switching (or current-controlled negative differential resistance) due to thermally induced conductivity changes produced by Joule heating. A detailed understanding of the device characteristics therefore relies on an understanding of the thermal properties of the niobium oxide film and the MOM device structure. In this study, we use time-domain thermoreflectance to determine the thermal conductivity of amorphous NbOx...[Show more]
Collections | ANU Research Publications |
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Date published: | 2022 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/316382 |
Source: | ACS Applied Materials and Interfaces |
DOI: | 10.1021/acsami.2c04618 |
Access Rights: | Open Access |
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File | Description | Size | Format | Image |
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Thermal Conductivity of Amorphous NbOx Thin.pdf | 2.39 MB | Adobe PDF |
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