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Room-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition

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Gao, Q; Buda, Manuela; Jagadish, Chennupati; Tan, Hark Hoe

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An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the...[Show more]

dc.contributor.authorGao, Q
dc.contributor.authorBuda, Manuela
dc.contributor.authorJagadish, Chennupati
dc.contributor.authorTan, Hark Hoe
dc.date.accessioned2006-01-17
dc.date.accessioned2006-03-27T02:10:29Z
dc.date.accessioned2011-01-05T08:32:10Z
dc.date.available2006-03-27T02:10:29Z
dc.date.available2011-01-05T08:32:10Z
dc.date.created2005
dc.identifier.urihttp://hdl.handle.net/1885/43095
dc.description.abstractAn InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the comparison of photocurrent spectra between a reference InGaAs QW and the InGaAsN QD structures.
dc.format.extent366956 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoen_AU
dc.subjectquantum dots
dc.subjectMOCVD
dc.subjectsemiconductor lasers
dc.titleRoom-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition
dc.typeJournal article
local.description.refereedyes
local.identifier.citationmonthjan
local.identifier.citationnumber2
local.identifier.citationpagesG57-59
local.identifier.citationpublicationElectrochemical and Solid-State Letters
local.identifier.citationvolume8
local.identifier.citationyear2005
local.identifier.eprintid3338
local.rights.ispublishedyes
dc.date.issued2005
CollectionsANU Research Publications

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