Room-temperature operation of InGaAsN quantum dot lasers grown by metalorganic chemical vapor deposition
Gao, Q; Buda, Manuela; Jagadish, Chennupati; Tan, Hark Hoe
Description
An InGaAsN single-layer-QD laser structure was grown on GaAs substrates by metalorganic chemical vapor deposition. The ridge-waveguide edge emitting laser diodes (LD) were fabricated and characterized. We demonstrate room-temperature operation of InGaAsN QD lasers with an emission wavelength of 1078 nm. Electroluminescence spectra as a function of injection current showed that InGaAsN QD LDs lased from an excited QD state at RT. The evidence for QD-related absorption was obtained from the...[Show more]
Collections | ANU Research Publications |
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Date published: | 2005 |
Type: | Journal article |
URI: | http://hdl.handle.net/1885/43095 |
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File | Description | Size | Format | Image |
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ESL-QD_laser-Gao-000G57[1].pdf | 358.36 kB | Adobe PDF |
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