Phosphorus gettering in multicrystalline silicon studied by neutron activation analysis
Macdonald, D; Cuevas, Andres; Kinomura, A; Nakano, Yukihiro
Description
Neutron Activation Analysis (NAA) is a powerful and sensitive technique for measuring trace amounts of impurities. In this work, we have applied NAA to the problem of identifying metallic impurities within the bulk of solar-grade cast multicrystalline silicon (mc-Si) wafers. In particular, the change in concentrations of these contaminants after phosphorus gettering is monitored, revealing a marked reduction in some metal species, but not in others.
Collections | ANU Research Publications |
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Date published: | 2002 |
Type: | Conference paper |
URI: | http://hdl.handle.net/1885/40829 http://digitalcollections.anu.edu.au/handle/1885/40829 |
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File | Description | Size | Format | Image |
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IEEE-with-header.pdf | 108.24 kB | Adobe PDF |
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