Capacitive effects in quasi-steady-state voltage and lifetime measurements of silicon devices
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When measuring I-V characteristics and carrier lifetimes in quasi-steady-state QSS conditions, it is important to consider the time dependence of the charge due to excess carriers within the device. This paper shows that the space-charge region present in pn-junction devices and in many lifetime test structures can produce a significant capacitive effect when measuring the low voltage and low carrier density range of QSS I-V curves. Both computer modeling and experiments show that...[Show more]
Collections | ANU Research Publications |
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Date published: | 2005-10-11 |
Type: | Journal article |
URI: | http://hdl.handle.net/10440/1104 http://digitalcollections.anu.edu.au/handle/10440/1104 |
Source: | Journal of Applied Physics |
DOI: | 10.1063/1.2073973 |
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File | Description | Size | Format | Image |
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Cuevas_Capacitive2005.pdf | 119.25 kB | Adobe PDF |
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